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Document Details
Document Type
:
Article In Journal
Document Title
:
EXPERIMENTAL STUDY OF THE IV CHARACTERISTIC OF GAN- METAL CONTACT
الدّراسة التّجريبيّة لسمة إيف لجان في اتّصال المعدن
Subject
:
EXPERIMENTAL STUDY OF THE IV CHARACTERISTIC OF GAN- METAL CONTACT
Document Language
:
English
Abstract
:
Wide band gap Gallium Nitride (GaN) is the most promising of the next generation semiconductor materials. It shows an excellent and high potential for a large range of technological applications in which the classical semiconductors, such as Si and GaAs, are unable to fulfill the needs of the advancing technology. In this work GaN prepared by the metal organià chemical-vapor deposition (MOCVD) techniques was used. This technique is capable of producing high quality films. However, the quality is still variable and dependant on the deposition parameters such as the substrate material, temperature souites, carrier gas pressures and other reactor conditions.
ISSN
:
1461-3840
Journal Name
:
OXFORD RESEARCH FORUM JOURNAL
Volume
:
2
Issue Number
:
3
Publishing Year
:
1427 AH
2006 AD
Article Type
:
Article
Added Date
:
Monday, February 25, 2013
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
سعيد سعد الامير
alamir, said saad
Investigator
Doctorate
ssaameer@yahoo.com
Files
File Name
Type
Description
35064.pdf
pdf
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