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Document Details
Document Type
:
Article In Journal
Document Title
:
Microwave measurements of the dielectric properties of silicon Carbide at high temperature
قياسات بالموجات الدقيقة عازلة للممتلكات من كربيد السيليكون في درجة حرارة عالية
Subject
:
Microwave measurements of the dielectric properties of silicon Carbide at high temperature
Document Language
:
English
Abstract
:
The dielectric properties of silicon carbide SiC have been measured using cavity perturbation technique. Three tubes with diameter 2 mm, 3 mm,and 5 mm were filled with the powerful material of SiC. The measurementswere taken for each tube at different frequencies 0.615 GHz, 1.412 GHz, 2.214GHz, 3.017 GHz and 3.820 GHz in a temperature range from 25 C.The electrical conductivity and the activation energy of SiC at the above frequencies and temperatures were calculated using the measured real and imaginary components of the complex permittivity.
ISSN
:
1319-0989
Journal Name
:
Arts and Humanities Journal
Volume
:
25
Issue Number
:
2
Publishing Year
:
1422 AH
2002 AD
Article Type
:
Article
Added Date
:
Sunday, February 3, 2013
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
د.ثريا عبدالقادر باعراقي
Baeraki, Dr.thuria Abdulkhader
Researcher
Doctorate
tbaerky@kau.edu.sa
Files
File Name
Type
Description
34962.pdf
pdf
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