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Document Details
Document Type
:
Article In Journal
Document Title
:
Studying the Electrical Resistivity of Heavily-Doped n-Type Silicon Using a Gradient Expansion of the Potential
دراسة المقاومة لمادة السليكون ذات شوائب متعادلة باستخدام مفكوك تدريجي للجهد
Subject
:
Physics
Document Language
:
English
Abstract
:
We calculate the electrical resistivity of heavily doped n type silicon of low temperature by deriving a donor ion potential,Eqn. (6), which has the form ?? ( r)?0[1+ ? (1/r+1/Rq)2+?]?? This potential together with the trail function is used to obtain the parameters of the zeroth-order-partial-wave shift ?0, and the first order particle-wave shift ?1, which are used to obtain the total cross section of the elastic scattering of a conduction electron. The relaxation time and the resistivity are calculated. The results are compared to that where the donor-ion potential suggested by Dingle and Csavinszky is used. It is shown that the parameter of the second term in the gradient expansion of the potential is less than 1/8. We used the variation principle and the Born approximation in our calculations.
ISSN
:
1012-1319
Journal Name
:
Science Journal
Volume
:
15
Issue Number
:
1
Publishing Year
:
1423 AH
2003 AD
Number Of Pages
:
7
Article Type
:
Article
Added Date
:
Sunday, October 11, 2009
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
عويش حربي الغامدي
OWAISH H. AlGhamdi
Researcher
محمد رياض عرفة
MOHAMMED R. ARAFAH
Researcher
Files
File Name
Type
Description
22717.pdf
pdf
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